Si/GexSi1−x/Si  resonant tunneling diode doped by thermal boron source

A study of resonant tunneling of holes in a Si/GexSi1−x/Si double barrier structure doped by a thermal boron doping source is presented. The source consists of a pyrolytic boron nitride crucible and uses filament heating. Sharp and constant doping levels between 1×1017 and 4×1019 cm−3 are obtained with a maximum K-cell temperature of ∼1560 °C. The double barrier tunneling devices realized by this source shows 2.1/1 peak-to-valley ratio at 4.2 K in current–voltage characteristics. Magnetotunneling measurements confirm that both the light and heavy holes participate in the resonant tunneling.