Answers are grounded in this paper and cite their sources.
Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5/spl times/10/sup 13/ traps/cm/sup 2/, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.
No takes yet. Share an insight, caveat, or question.
Jang et al. (2005) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: