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This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ~ SiO₂/ TiO₂/ SiO₂(STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium–gallium–zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76cm²/ Vs, and goodI_ ON/I_ OFFratio of6.7× 10⁵, which have the potential for the application of high-resolution flexible display.
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Hsu et al. (2013) studied this question.
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