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April 1, 1984Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Very low threshold current GaAs–AlGaAs GRIN-SCH lasers grown by MBE for OEIC applications

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Authors

TFTakuro FujiiNTT (Japan)SYShigenobu YamakoshiKogakuin UniversityKNKazuo NanbuSumitomo Electric Industries (Japan)

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Cite This Study

Fujii et al. (1984) studied this question.

synapsesocial.com/papers/6a8470dbac510c864ff313b7https://doi.org/10.1116/1.582799
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