Growth, transport, magnetic, magneto-optical, and magnetotunneling properties of ferromagnetic semiconductor (GaMn)As and its quantum heterostructures, including superlattices and tunnel junctions, are presented. Spin-related phenomena in such III–V based ferromagnetic quantum heterostructures are shown to give a new degree of freedom in the band-gap engineering and wave function engineering for semiconductor electronics and photonics.
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Tanaka et al. (2000) studied this question.
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