Visible and infrared electroluminescence from an Er‐doped n‐ZnO/p‐Si light emitting diode

Er‐doped ZnO/Si hetero‐junctions have been formed by laser ablating an Er‐contained ZnO target onto p‐Si(100) substrates. Light emitting diodes fabricated by using these samples exhibited bright green (536 nm and 556 nm), red (665 nm) and 1.54 µm emissions at room temperature. A light emission at 1180 nm was also observed. These emissions arose from intra‐4f transitions in Er 3+ ions that were excited by impact excitation process. A threshold voltage of ∼10 V was achieved for emitting multi colors. Our results show a strong possibility of realizing the Si‐based light emitting devices by Er doing. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)