Preparation of Oxide Thin Films by Laser Ablation

ZnO and PbZr0.9Ti0.1O3 (PZT) thin films were prepared by laser ablation using a KrF excimer laser. The c-axis-oriented ZnO thin films were successfully grown at substrate temperatures of 180-400°C in Ar and Ar+O2. The deposition rates of the films obtained ranged from 150 to 700 Å/min, and these values were larger than those of films grown by conventional magnetron sputtering. Perovskite-type PZT thin films with a rhombohedral structure were also successfully grown at 680°C. The deposition rates of the films obtained ranged from 40 to 240 Å/min, and these values were also larger than those of films grown by magnetron sputtering.