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A three-dimensional table look-up MOSFET modeling technique is described. The table, which is able to deal with future submicron devices, is constructed with a few thousand work memory capacity requirement by suppressing data redundancy. Sufficiently high accuracy, with less than point several percent error, is achieved by using a special interpolation, which is called curve shape fitting technique. Computational time to perform the interpolation from the table is much less than that for the analytical model.
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Shima et al. (1982) studied this question.
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