It has been reported that room-temperature Bi implants with no post-implantation annealing produce high-conductivity p-type layers in ordinarily n-type CdS. We have similarly implanted Bi and also Xe into CdS at the 1015 cm−2 level, and have studied various properties including optical absorption, photoluminescence, and photovoltage. In all cases, similar behavior is observed with both Bi and Xe implants, which indicates that radiation damage effects are dominating any purely chemical effects.
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Tell et al. (1969) studied this question.
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