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October 1, 1981IEEE Electron Device Letters

MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate

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Authors

EME. W. MabyRensselaer Polytechnic InstituteMGM. W. GeisMIT Lincoln LaboratoryYLY.L. LeCozMassachusetts Institute of Technology

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Maby et al. (1981) studied this question.

synapsesocial.com/papers/6a852440918170c1666e100bhttps://doi.org/10.1109/edl.1981.25418
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