A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon.
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Liu et al. (2014) studied this question.
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