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April 15, 1970Applied Physics Letters

The Lattice Location of Boron Ions Implanted Into Silicon

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Authors

GFG. FladdaSwedish Forest AgencyKBK. BjörkqvistKTH Royal Institute of TechnologyLEL. ErikssonCenter for NanoScience

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Fladda et al. (1970) studied this question.

synapsesocial.com/papers/6a853d7af2bb7ee68cf23fd9https://doi.org/10.1063/1.1653208
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING1967 · 274 citations
  2. 2Solid Solubility and Diffusion Coefficients of Boron in Silicon1969 · 178 citations
  3. 3Electrical Behavior of Group III and V Implanted Dopants in Silicon1969 · 156 citations
  4. 4Evidence of a replacement reaction between ion implanted substitutional Tl dopants and interstitial Si atoms1969 · 24 citations
  5. 5LATTICE LOCATION OF DOPANT ELEMENTS IMPLANTED INTO Ge1968 · 27 citations