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Etch rates of are obtained for both GaSb and InSb in electron cyclotron resonance discharges. The GaSb surfaces remain smooth and stoichiometric over a wide range of plasma conditions (microwave power 400 - 1000 W, pressure 1.5 - 10 mTorr, to ratio 0.1 - 1.5). However, we were unable to prevent preferential loss of Sb from InSb causing rough, non-stoichiometric surfaces under all conditions investigated. It appears that low-profile electromagnet ECR sources are not good choices for -based dry etching of InSb.
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Mileham et al. (1997) studied this question.
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