Zn, Te and Se Doping of LPE InGaPAs0.01 Grown on (100) GaAs Substrates

The surface and interface morphology, thickness, lattice constant, and the electrical and photoluminescence (PL) properties of doted InGaPAs 0.01 grown by LPE on GaAs at 785°C are investisated as a functnon of Zn, Te or Se dopant concentrations in sources ( X 1 Zn , X 1 Te or X 1 Se ). The thickness chance caused by doping up to X 1 Zn =8×10 -3 , X 1 Te =8×10 -3 or X 1 Se =10 -3 is less than 7% and lattice-constant change is less than 7×10 -4 . The hole and electron concentration, p and n , mobility, µ h and µ e , and resistivity ρ are shown as a function of X 1 Zn , X 1 Te or X 1 Se and temperature. 298 K values are: p =1.1×10 22 X 1 Zn cm -3 , µ h =30 cm 2 /V·s, n =6×10 20 X 1 Te or 1.6×10 22 X 1 Se cm -3 and 500 cm 2 V·s≤µ e ≤1000 cm 2 /V·s. Both n- and p-type layers show PL-spectral-peak shifts toward higher energy side with increasing n or p . The PL intensity of n-type layers reaches a maximum for n =2×10 18 cm -3 while that of p-type layers only decreases with increasing p .