Answers are grounded in this paper and cite their sources.
A physically based MESFET model for device modeling and circuit simulation has been developed. The model directly couples the dc and ac models and takes into account velocity saturation as well as the impurity profile as integral parts of the dc and ac models. The model, verified for implanted self-aligned MESFET's, has been implemented in SPICE and used to simulate circuits.
No takes yet. Share an insight, caveat, or question.
Johnson et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: