A simple analytical model for the electric field distribution in silicon-on-insulator (SOI) reduced surface field (RESURF) structures is developed. The model applies for uniform and linearly graded doping profiles. It is also applicable to trench MOS barrier Schottky (TMBS) rectifiers, which have a similar structure. The results are valuable for breakdown voltage, tunneling, hot carrier, and other electric field dependent analyses.
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S. Merchant (1999) studied this question.
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