The determination of doping profiles from MOSC-Vcurves has previously been calculated by the use of the depletion approximation and other correction techniques. A method is presented based upon solving Poisson's equation for the charge distribution of an assumed doping profile, calculating the capacitance from that doping profile, and allowing an iterative calculation of the doping profile to produce the desiredC-Vcurve.
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J.M. Blacksin (1986) studied this question.
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