Gate-self-aligned n-channel and p-channel germanium MOSFETs

Gate-self-aligned germanium MOSFETs were fabricated. By gate-self-aligned it is meant that the gate is used as the mask structure for the ion implantation that forms heavily doped source and drain regions (previous self-aligned Ge MOSFETs used a dummy-gate process). A germanium oxynitride gate-dielectric was used to fabricate n- and p-channel germanium inversion-mode MOSFETs with transconductances >100 mS/mm at room temperature at a gate length of 0.6 mu m for both n- and p-channel devices.