Answers are grounded in this paper and cite their sources.
Experimental study demonstrates universal short-channel effect scaling in undoped silicon nanowire MOSFETs, indicating gate-all-around architecture enables a 2.5-fold channel length reduction.
Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function ofLEFF/λ, whereLEFFis the effective channel length and λ is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate thatLEFFof undoped GAA NW MOSFETs can be scaled down by ~2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control.
No takes yet. Share an insight, caveat, or question.
Bangsaruntip et al. (2010) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: