Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 1, 1970IEEE Transactions on Electron Devices

Diode edge effect on doping-profile measurements

View Full Paper
Ask AI
Bookmark
Share

Authors

JCJ.A. CopelandGeorgia Institute of Technology

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

J.A. Copeland (1970) studied this question.

synapsesocial.com/papers/6a85ca6cea214a590d3da680https://doi.org/10.1109/t-ed.1970.16996
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique1968 · 178 citations
  2. 2Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier System1963 · 451 citations
  3. 3Design and Construction of a Direct-Plotting Capacitance Inverse-Doping Profiler for Semiconductor Evaluation1969 · 11 citations
  4. 4A technique for directly plotting the inverse doping profile of semiconductor wafers1969 · 112 citations