n-type germanium (4 ×{} 10¹⁴ Sb/cm³) has been irradiated with 1.1-MeV electrons at 5 ^∘{}K. The defects produced have been studied by measuring the voltage-dependent capacitance of a metal-germanium junction formed at the surface of a germanium sample. These measurements were made at 10 ^∘{}K and directly gave the charge density near the surface of the sample. The production and recovery of defects seen near the surface is the same as seen in bulk experiments. A 0.5-MeV electron beam was used to cause radiation annealing of the defects at 5 ^∘{}K. The fraction recovered during radiation annealing is directly proportional to t1/2. A model based on diffusion-limited-recovery theory is used to explain these results. This model is also used to discuss the results of previous experiments. The temperature dependence of the observed recovery at 5 ^∘{}K gave a defect migration energy of 0.0044 ±{} 0.008 eV.
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Hyatt et al. (1971) studied this question.