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December 1, 1970Applied Physics Letters

EFFECTS OF DOPING PROFILE ON THE MEASURED VELOCITY-ELECTRIC FIELD CHARACTERISTIC OF n-TYPE GaAs

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Gary H. GloverGary H. GloverCincinnati Children's Hospital Medical Center

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Gary H. Glover (1970) studied this question.

synapsesocial.com/papers/6a85cc862e9055d9662dd4a4https://doi.org/10.1063/1.1653273
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A microwave evaluation of the velocity-field characteristic in different regions of individual epitaxial gallium-arsenide layers1969 · 6 citations
  2. 2A NEW MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GaAs1969 · 20 citations
  3. 3Measurements of the current-field strength characteristic of n-type gallium arsenide using various high-power microwave techniques1967 · 26 citations
  4. 4Transport Properties of GaAs1968 · 311 citations