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A technique for the determination of two-dimensional impurity profiles in silicon using methods for emission computed tomography is presented. Several one-dimensional impurity profiles obtained for different directions through the sample are used to reconstruct the two-dimensional profile. A simulation study of the experiment is described, and effects of various experimental and reconstruction parameters are discussed. Reconstructions of an area of 4 mu m*4 mu m from thirteen one-dimensional measurements, with a resolution of 1000 AA, are numerically possible.>
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Goodwin-Johansson et al. (1989) studied this question.
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