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August 1, 1985Applied Physics Letters

Non-alloyed ohmic contact to n-GaAs by solid phase epitaxy

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Authors

EME. D. MarshallUniversity of California SystemWCW. X. ChenUniversity of Electronic Science and Technology of ChinaCWC. S. WuTsinghua–Berkeley Shenzhen Institute

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Marshall et al. (1985) studied this question.

synapsesocial.com/papers/6a8659d2004d97ec463a6b47https://doi.org/10.1063/1.96198
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Also Consider

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  1. 1A study of Ge/GaAs interfaces grown by molecular beam epitaxy1981 · 66 citations
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  4. 4Antimony doping of Si layers grown by solid-phase epitaxy1976 · 16 citations
  5. 5Electrical measurements of the conduction band discontinuity of the abrupt Ge–GaAs 〈100〉 heterojunction1983 · 22 citations