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An experimental technique is described for determining the electrical properties of thin semiconducting films as a function of distance from the surface. The method is applied to silicon on sapphire films nominally 1 μ thick and doped ``n'' type on the order of (2–6)×1016/cm3, and the variation in average mobility and carrier concentration with depth into the layer is determined.
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A.C. Ipri (1972) studied this question.
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