Pulse oscillation of self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy

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A self-organized In0.53Ga0.47As∕(In0.53Ga0.47As)2(In0.52Al0.48As)2 quantum wire (QWR) laser was grown on a (775)B InP substrate by molecular beam epitaxy. Threefold 3.6-nm-thick In0.53Ga0.47As QWR layers were used as an active layer, where lateral confinement potential was induced by a nanometer scale interface corrugation of InGaAs∕(InGaAs)2(InAlAs)2 with an amplitude of 7nm and a period of 65nm. Photoluminescence was strongly polarized along the wire direction [P≡(I‖−I⊥)∕(I‖+I⊥)=0.43–0.54] in the temperature range from 12to150K, indicating their good one dimensionality. A 10μm×500μm stripe-contact QWR laser with uncoated cleaved mirrors oscillated with a threshold current density of 5.2kA∕cm2 and a lasing wavelength of 1215nm at 150K under pulsed current condition.