The effects of stressing high quality capacitors with a constant d‐c current, are observed by use of C‐V and I‐V curve measurements. Short current stresses are found to produce positive charges, assumed to be holes, in the bulk of . With prolonged stress, this charge is compensated by electron trapping in the oxide. With Si biased positively (polysilicon negative), effects attributed to direct tunneling of holes from the anode into are observed.
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Riko Radojcic (1983) studied this question.