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The lattice location and electrical activity of ion implanted Sn in InP after rapid thermal annealing has been determined by, respectively, Mössbauer spectroscopy using the 119mSn isomer and differential Hall resistivity measurements. Sn is preferentially located on the In sublattice for concentrations below 2×1019 cm−3 resulting in a high electrical activation and mobility. For Sn concentrations above 2×1019 cm−3, in addition different electrically inactive Sn complexes are observed. No indication of a Sn location on P-sublattice sites has been found.
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j et al. (1993) studied this question.
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