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Results of a study of photoluminescence of two groups(A and B) of non-intentionally doped InP single crystals with different Hall mobilities (μA = 3 × 103 cm2/Vs, μB = 1.5 × 104 cm2/Vs) and degenerated InP: Te samples are presented. The near-band-edge emission spectra of B-group and InP:Te crystals are found to be similar, this seems to be due to the presence of local regions with increased residual impurity concentration in B-group crystals. Investigations of several thermal treatments and of the influence of phosphorus and argon ion implantation on the radiative properties of the crystals allow to confirm that centres involving the phosphorus vacancy, VP, and phosphorous interstitial, Pi, are responsible for the photoluminescence bands at 1.08 and 1.21 eV, respectively. The possible nature of other radiative recombination centres in indium phosphide is discussed.
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Георгобиани et al. (1983) studied this question.
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