The core structure of extrinsic stacking faults in silicon

The core structure of oxidation-induced extrinsic stacking faults in silicon has been studied by high-resolution transmission electron microscopy. The stacking faults were viewed edge-on in thin (011) crystals so that two sets of (111) lattice planes were imaged simultaneously. The images confirm the stacking sequence A‖aCcB‖b (vertical bars denote twinning planes) that was predicted by Hornstra for the stacking-fault core.