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April 7, 1997Applied Physics Letters

Gettering of Fe impurities by bulk stacking faults in Czochralski-grown silicon

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BSBo ShenTongji UniversityXZXiuying ZhangNational University of SingaporeKYKe YangSichuan University

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Cite This Study

Shen et al. (1997) studied this question.

synapsesocial.com/papers/6a86e65ba588a0bfb8beeaadhttps://doi.org/10.1063/1.118718
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Gettering of copper by bulk stacking faults and punched-out dislocations in Czochralski-grown silicon1994 · 71 citations
  2. 2Thermally Induced Defect Behavior and Effective Intrinsic Gettering Sink in Silicon Wafers1981 · 53 citations
  3. 3Oxygen precipitation and the generation of dislocations in silicon1976 · 173 citations