The energy levels due to quenched-in defects in thermally-treated p-type silicon are analyzed by capacitance transient spectroscopy (DLTS). The quenching rate is found to affect the introduction of several kinds of hole trap, but neither the oxygen concentration nor the dislocation density in the starting materials influences the formation of defects. A hole trap at E v +0.32 eV, which is not correlated with transition metal impurities such as iron or copper, is found to be introduced efficiently in the rapidly-quenched crystals.
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Kenshiro Nakashima (1985) studied this question.
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