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The composition of the polishing solution is optimized by investigating the impact of the WIWNU (the so-called within-wafer-non-uniformity WIWNU) and the removal rate (RR) on the polishing characteristics of copper. The oxidizer concentration is 1 Vol%; the abrasive concentration is 0.8 Vol%; the chelating agent of the solution is 2 Vol%. The working pressure is 1 kPa. The defect on the surface is degraded and the surface is clean after polishing. The removal rate is 289 nm/min and the WIWNU is 0.065. The surface roughness measured by AFM after CMP (chemical mechanical planarization) is 0.22 nm.
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Hu et al. (2011) studied this question.
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