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Schottky barrier height modulation (SBHM) mechanism is utilized on metal-insulator-semiconductor tunnel diodes (MISTD) to achieve high photon current gain. The photon current gain can reach over 24000 at 2.5 V for the MISTD with oxide thickness 3.11 nm under photon flux of1.03× 10¹² cm⁻²sec⁻¹. The operation voltage can go down to below 1 V depending on the oxide thickness of MISTD and the requirement of the gain. For example, the MISTD with oxide thickness 2.89 nm can produce photon current gain above 2800 at 1 V under photon flux of1.03× 10¹² cm⁻²sec⁻¹. It is found that the devices can reach an electric field in the order of10⁴-10⁵ V/cmunder low operation voltage, which is helpful for high-speed applications. MISTD with gate metal and oxide thickness being properly chosen is simple in structure but effective in photon sensing.
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Chen et al. (2022) studied this question.
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