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An all molecular beam epitaxy grown 1.55 µm vertical cavity surface-emitting laser is presented which comprises an InP/InGaAsP bottom mirror, multiple quantum well active layer and a GaAlAs/GaAs metamorphic top mirror directly grown on the InP cavity. This structure takes advantage of the intrinsic optical, electrical and thermal properties of GaAlAs/GaAs material and is compatible with a 2 in process. Such an approach will therefore lead to a drastic reduction in the cost of optical sources and offer the possibility of a massive development of the optical network.
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Boucart et al. (1998) studied this question.
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