We report on a 1.5-μm vertical-cavity laser that utilizes one GaInAsP-InP and one Si-SiO2mirror in combination with a strain-compensated GaInAsP quantum-well active layer. Pulsed lasing operation was achieved in a temperature range from -160 to +43/spl deg/C. The lasers exhibit 30-mA pulsed threshold current at room temperature. CW operation was obtained up to -25/spl deg/C.
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Streubel et al. (1996) studied this question.
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