A highly reflective InGaAsP/InP Bragg mirror is reported for the first time at 1.3 µm. The control of both layer compositions and thicknesses over 2 in wafers in the gas-source molecular-beam epitaxy equipment has enabled the realisation of such a mirror. An absolute reflectivity of 99.6% using a VW technique was recorded on a Pt/Au metallised 40-period mirror.
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Salet et al. (1997) studied this question.
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