The dissociation values, Δ of dislocations in deformed GaAs crystals doped with zinc and tellurium and undoped ones are measured by the weak-beam method of electron microscopy. Using statistical analysisit is shown that with the probability ≧ 0.95 the values of Δ aresensitive to doping. The relative variations of dissociation values ofdislocations of different orientations in relation to their Burgers vector are also observed.
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Khodos et al. (1989) studied this question.
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