Alpha and Beta Grain Boundaries in Indium Antimonide

Grain boundaries in indium antimonide with misfit angles of 6° have been prepared which, according to the dislocation model for grain boundaries, consist of rows of α or β dislocations. Current flow across these boundaries in n- and p-type material has been studied. Alpha boundaries were found to present a barrier to current flow in n- and p-type material, β boundaries only in p-type material. This indicates for α dislocations donor behavior in p-type material, acceptor behavior in n-type material and for β-dislocations donor characteristics. A theoretical model for the boundary states is proposed.