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January 1, 1980IEEE Transactions on Electron Devices

Vapor phase epitaxially grown InGaAs photodiodes

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Authors

NSNobuhiko SusaHitachi (Japan)YYY. YamauchiNTT Basic Research LaboratoriesHKH. KanbeKochi University of Technology

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Susa et al. (1980) studied this question.

synapsesocial.com/papers/6a879d297ef8b32fd3f3e656https://doi.org/10.1109/t-ed.1980.19826
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