The conduction-band offsets ΔEc of n-isotype InxAl1−xAs/In0.53Ga0.47As heterojunctions, with 0.47<x≤0.52, grown by molecular-beam epitaxy, lattice matched and pseudomorphically strained on n+-InP substrates, were determined from the capacitance-voltage profiling technique. A more accurate ΔEc value was obtained after the correction for fixed interface charge perturbation. The ΔEc related to the band-gap difference ΔEgs of the heterojunction are found to be ΔEc=0.70ΔEgs. The fixed interface charges are acceptorlike with a density of the order 1010/cm2.
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Lee et al. (1990) studied this question.
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