A 23-ns 4-Mb CMOS SRAM with 0.2- mu A standby current

A 4-Mb CMOS SRAM having 0.2- mu A standby current at a supply voltage of 3 V has been developed. Current-mirror/PMOS cross-coupled cascade sense-amplifier circuits have achieved the fast address access time of 23 ns. A new noise-immune data-latch circuit has attained power-reduction characteristics at a low operating cycle time without access delay. A 0.5- mu m CMOS, four-level poly, two-level metal technology with a polysilicon PMOS load memory cell, yielded a small cell area of 17 mu m/sup 2/ and the very small standby current. A quadruple-array, word-decoder architecture allowed a small chip area of 122 mm/sup 2/.>