Accurate determination of contact resistivities (ρc) below1 × 10⁻⁸Ω · cm²is challenging. Among the frequently applied transmission line models (TLMs), circular TLM (CTLM) has a simple process flow, while refined TLM (RTLM) has a highρ caccuracy at the expense of a more complex fabrication. In this letter, we will present a novel model—multiring CTLM (MR-CTLM) , which combines the advantages of a simple process and a highρ cextraction resolution. We fabricated ultralow-ρ cTi/n-Si contacts and demonstrated the capability of MR-CTLM to extract theρ cas low as6.2 × 10⁻⁹~Ω · cm²with high precision.
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Yu et al. (2015) studied this question.
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