Growth Characteristics and Electrical Properties of (100) CdTe Layers Grown on (100) GaAs by Low-Pressure Organometallic Vapor Phase Epitaxy

The growth mechanism and electrical characteristics of (100) CdTe layers grown on (100) GaAs by low-pressure organometallic vapor phase epitaxy have been reported. The growth mechanism changed around the growth temperature of 400°C. Adduct pyrolysis dominated the growth below the temperature of 400°C. Above this temperature, a pyrolysis of DETe dominated the growth. High-quality p-type layers were obtained when the layers were grown thicker than 2 µm at 420°C. The hole density and the Hall hole mobility were in the ranges of 2.2-3.5×10 15 cm -3 and 60–100 cm 2 /V·s, respectively. In contrast to this, the grown layer became semi-insulating when the thickness was less than 2 µm due to out-diffusion of Ga from the substrates. The double crystal X-ray rocking curve also showed a FWHM value of 155 arcsec at the thickness of 6 µm.