A process for high aspect ratio reactive ion etching of molecular beam epitaxially (MBE) grown GaAs and AlGaAs materials using a mixture of methane and hydrogen is described. The process utilises a positive photoresist which can withstand 7 mu m mesa etching of GaAs/Al 0.3 Ga 0.7 As and is simple to remove in acetone or oxygen plasmas. This eliminates the need for plasma-enhanced chemical vapour deposition (PECVD) mask technology.
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Law et al. (1989) studied this question.
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