Ballistic electron emission spectroscopy (BEES) has been used to study both the conduction and valence band offsets between InAs and AlAsSb. With the addition of As to AlSb, the conduction band offset between it and InAs has been found to decrease despite the increase in the band gap. The resulting increase in the valence band causes the InAs/Al(As, Sb) band lineup to change from a staggered (type II) to a straddling (type I). Both room-temperature and low-temperature (77 K) BEES spectra have been taken to determine the band offsets.
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Bhargava et al. (1999) studied this question.
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