Resonant cavity enhanced GaInAsSb-AlAsSb photodetector grown by MBE for mid-IR applications

Resonant cavity enhanced photodetectors based on GaInAsSb-AlAsSb grown by MBE have been successfully fabricated and characterized to operate at near 2 μm wavelength range. By incorporating a 10-pair lattice matched AlAsSb-GaSb quarter wavelength reflector, strong cavity enhancement of photoresponse and post-growth selectivity of the resonant wavelength have been realized. The photodetectors have shown record setting room temperature performance with a maximum quantum efficiency of /spl eta/=85%, a peak responsivity of R=1.3 A/W and a detectivity D* of 1.35×10/sup 10/ cm Hz12/ W/sup -1/ at -0.5-V bias at resonant wavelength.