GaAs/GaAlAs device structures prepared by molecular beam epitaxy using indium-free mounting techniques

A simple indium-free mount is described for the VG-Semicon V80-H MBE system. In conjunction with nonstandard substrate preparation techniques, the use of this mount has enabled GaAs/GaAlAs device structures to be prepared with consistently low (≤200/cm2) oval defect concentrations. Both 2DEG structures, with high 4 K mobilities, and GRINSCH lasers, with low thresholds, have been prepared to demonstrate the capabilities of the mounting procedures.