Bilayer quantum transistor

The ballistic transport properties of a bilayer structure are studied under the Landau–Büttiker formalism. An oscillatory conductance as a function of the front gate is found. The effect arises from the tunneling, which causes a phase difference between the symmetric and antisymmetric eigenstates. The gate electrode controls the effective tunneling gap and, therefore, the interference. The mechanism may be used to design a bilayer analogue of the spin field-effect transistor without ferromagnetic electrodes.