We have directly observed individual hopping events in the flow of curent along a single chain of localized states. These events modulate the conductance of a ballistic constriction formed in GaAs/Alₓ{Ga}_{1{{-}}x}$As split-gate transistor, resulting in a time irreversible random telegraph signal. The hopping chain, carrying approximately one electron per second, is situated between the gate and the two-dimensional electron gas, and can be altered by varying the gate voltage.
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Cobden et al. (1992) studied this question.
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